Organic space holder for trench processing
US4945069A · kind A · utility
12Cited by
2References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1988 |
| Grant date | Jul 31, 1990 |
| Priority date | — |
| Expiry date | Dec 16, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A void (60) is created in a semiconductor substrate (52) by forming a cavity which is subsequently filled with an organic polymer (66). The organic polymer is masked and etched to form a spacer. A dielectric (70) fills the portions of the cavity where the organic polymer was etched away. The organic polymer is subsequently etched leaving a void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.