Bipolar junction transistor on silicon carbide
US4945394A · kind A · utility
95Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1987 |
| Grant date | Jul 31, 1990 |
| Priority date | — |
| Expiry date | Oct 26, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
The invention comprises a bipolar junction transistor formed in silicon carbide. By utilizing high temperature ion implantation of doping ions, the base and emitter can be formed as wells, resulting in a planar transistor. Mesa-type transistors are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.