John Edmond
183Patents
44h-index
94Co-inventors
93Inventor score
Filing activity: Oct 26, 1987 → Apr 7, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5523589A | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime | Electricity | 653 | Expired |
| US5393993A | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices | Electricity | 587 | Expired |
| US5739554A | Double heterojunction light emitting diode with gallium nitride active layer | Electricity | 516 | Expired |
| US4946547A | Method of preparing silicon carbide surfaces for crystal growth | Electricity | 482 | Expired |
| US4918497A | Blue light emitting diode formed in silicon carbide | Electricity | 481 | Expired |
| US4966862A | Method of production of light emitting diodes | Electricity | 438 | Expired |
| US5027168A | Blue light emitting diode formed in silicon carbide | Electricity | 402 | Expired |
| US6120600A | Double heterojunction light emitting diode with gallium nitride active layer | Electricity | 377 | Expired |
| US6201262A | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure | Electricity | 354 | Expired |
| US5416342A | Blue light-emitting diode with high external quantum efficiency | Electricity | 334 | Expired |
| US5338944A | Blue light-emitting diode with degenerate junction structure | Electricity | 297 | Expired |
| US6187606A | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | Electricity | 285 | Expired |
| US5604135A | Method of forming green light emitting diode in silicon carbide | Emerging Cross-Sectional Technologies | 261 | Expired |
| US7910945B2 | Nickel tin bonding system with barrier layer for semiconductor wafers and devices | Electricity | 198 | Active |
| US5592501A | Low-strain laser structures with group III nitride active layers | Electricity | 175 | Expired |
| US7791061B2 | External extraction light emitting diode based upon crystallographic faceted surfaces | Electricity | 148 | Active |
| US6906352B2 | Group III nitride LED with undoped cladding layer and multiple quantum well | Electricity | 141 | Expired |
| US5093576A | High sensitivity ultraviolet radiation detector | Electricity | 135 | Expired |
| US7211833B2 | Light emitting diodes including barrier layers/sublayers | Electricity | 129 | Expired |
| US6459100B1 | Vertical geometry ingan LED | Electricity | 116 | Expired |
| US5539217A | Silicon carbide thyristor | Electricity | 107 | Expired |
| US5726463A | Silicon carbide MOSFET having self-aligned gate structure | Emerging Cross-Sectional Technologies | 104 | Expired |
| US5394005A | Silicon carbide photodiode with improved short wavelength response and very low leakage current | Emerging Cross-Sectional Technologies | 102 | Expired |
| US5838706A | Low-strain laser structures with group III nitride active layers | Electricity | 95 | Expired |
| US4945394A | Bipolar junction transistor on silicon carbide | Emerging Cross-Sectional Technologies | 95 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.