Semiconductive structure useful as a pressure sensor
US4945769A · kind A · utility
50Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1989 |
| Grant date | Aug 7, 1990 |
| Priority date | — |
| Expiry date | Mar 6, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0042
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.