David E. Moss
5Patents
4h-index
5Co-inventors
46Inventor score
Filing activity: Jan 23, 1981 → Jun 29, 1990
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4993143A | Method of making a semiconductive structure useful as a pressure sensor | Emerging Cross-Sectional Technologies | 72 | Expired |
| US4945769A | Semiconductive structure useful as a pressure sensor | Physics | 50 | Expired |
| US5034342A | Method of forming semiconductor stalk structure by epitaxial growth in trench | Emerging Cross-Sectional Technologies | 7 | Expired |
| US4318936A | Method of making strain sensor in fragile web | Emerging Cross-Sectional Technologies | 4 | Expired |
| US4975759A | Semiconductive stalk structure | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.