Method for fabricating hybrid integrated circuit
US4946709A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 1989 |
| Grant date | Aug 7, 1990 |
| Priority date | — |
| Expiry date | Aug 17, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a hybrid IC substrate comprises the steps of: preparing an insulating ceramic substrate having a major surface; baking one or more conductors of a first group formed of high melting point metal or alloy thereof on the major surface; covering the conductors of the first group with a first plated film formed by electroless plating; forming an insulating porous active including a glass component and a small amount of a metal component having a catalytic action for electroless plating on the first plated film; and forming one or more conductors of a second group by electroless plating on the active layer, whereby portions of the active layer sandwiched between the conductors of the first and second groups are rendered conductive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.