Particulate semiconductor devices and methods
US4947219A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 6, 1987 |
| Grant date | Aug 7, 1990 |
| Priority date | — |
| Expiry date | Jan 6, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Particulate semiconductor devices and method of preparation by a low temperature process. A particulate layer is screen printed on a metallized substrate and a rear contact is formed by alloying the semiconductor particules to the substrate. The layer is fired and a front Schottky contact applied. The resulting device has sharp diode IV-characteristics, low leakage current, and significant reverse break-down voltages. In the manufacture of efficient and red-enhanced particulate silicon pn-junction solar cells, prediffused particles are used, offering major advantages compared to other techniques, such as where the junction is formed after completion of a particulate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.