Yoked, orthogonally distributed equal reactance amplifier
US4947220A · kind A · utility
Inventor
Key dates
| Filing date | Aug 27, 1987 |
| Grant date | Aug 7, 1990 |
| Priority date | — |
| Expiry date | Aug 27, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/873
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A field effect transistor device especially useful in common gate amplifier circuits for use with millimeter wave and microwave signals. By forming the device in a unitary monolith, and by making the device's source to gate and drain to gate geometry identical, the input and output portions of the device are symmetric and impedance matched, increasing the device's power handling capacity. The device's source and drain contain heavily doped regions which operate to increase the device's upper frequency range, and also act as inherent channel end stops. In several embodiments, plural such devices are yoked together integrally source to drain, eliminating common structures of adjacent stages, simplifying the device and its fabrication, and permitting traveling wave amplification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.