Manufacture of a substrate structure for a composite semiconductor device using wafer bonding and epitaxial refill
US4948748A · kind A · utility
32Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1989 |
| Grant date | Aug 14, 1990 |
| Priority date | — |
| Expiry date | Aug 21, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate structure for a composite semiconductor device comprises first and second semiconductor substrates whose major surfaces are bonded to each other with an insulating layer interposed therebetween. In this substrate structure, an epitaxial layer is grown from part of the second semiconductor substrate, forming one element area, and another element area is formed in the first semiconductor substrate area and isolated from the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.