Method of making sagfets on buffer layers
US4948752A · kind A · utility
7Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1990 |
| Grant date | Aug 14, 1990 |
| Priority date | — |
| Expiry date | Jan 31, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
Abstract
A composite buffer layer is formed with a layer of GaAs on a semi-insulating GaAs substrate. Next a short period superlattice is formed followed by another GaAs layer, whereon is formed a first AlGaAs layer having a first mole fraction of Al and a second AlGaAs layer having a second mole fraction of Al higher than the first mole fraction. As intrinsic GaAs channel layer is formed on the second AlGaAs layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.