Semiconductor integrated circuit device
US4949138A · kind A · utility
34Cited by
1References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 11, 1989 |
| Grant date | Aug 14, 1990 |
| Priority date | — |
| Expiry date | May 11, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
Abstract
A semiconductor IC device comprising a memory cell wherein a word line is buried in a groove formed in a semiconductor layer, a transfer gate transistor is constructed by the word line and a side area thereof, and on the surface of the semiconductor layer there is formed a capacitor having one electrode being a source or drain region of the transfer gate transistor and a dielectric film contacting with the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.