Akitoshi Nishimura
19Patents
12h-index
14Co-inventors
71Inventor score
Filing activity: May 11, 1989 → Mar 26, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6373127B1 | Integrated capacitor on the back of a chip | Electricity | 204 | Expired |
| US6587367B1 | Dummy cell structure for 1T1C FeRAM cell array | Physics | 72 | Expired |
| US6728128B2 | Dummy cell structure for 1T1C FeRAM cell array | Physics | 63 | Expired |
| US5508953A | Capacitor, electrode structure, and semiconductor memory device | Electricity | 61 | Expired |
| US6033953A | Method for manufacturing dielectric capacitor, dielectric memory device | Electricity | 43 | Expired |
| US5168340A | Semiconductor integrated circuit device with guardring regions to prevent the formation of an MOS diode | Electricity | 38 | Expired |
| US6363002B1 | Ferroelectric memory with bipolar drive pulses | Physics | 35 | Expired |
| US4949138A | Semiconductor integrated circuit device | Electricity | 34 | Expired |
| US5793600A | Method for forming high dielectric capacitor electrode structure and semiconductor memory devices | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6150183A | Method for manufacturing metal oxide capacitor and method for manufacturing semiconductor memory device | Electricity | 14 | Expired |
| US5840615A | Method for forming a ferroelectric material film by the sol-gel method, along with a process for a production of a capacitor and its raw material solution | Electricity | 13 | Expired |
| US5654567A | Capacitor, electrode or wiring structure, and semi conductor device | Electricity | 13 | Expired |
| US5776788A | Method for forming a strong dielectric film by the sol-gel technique and a method for manufacturing a capacitor | Electricity | 12 | Expired |
| US6297085A | Method for manufacturing ferroelectric capacitor and method for manufacturing ferroelectric memory | Electricity | 9 | Expired |
| US6342420B1 | Hexagonally symmetric integrated circuit cell | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6721200B2 | Dummy cell structure for 1T1C FeRAM cell array | Physics | 2 | Expired |
| US6166408A | Hexagonally symmetric integrated circuit cell | Emerging Cross-Sectional Technologies | 1 | Expired |
| US6724646B2 | Dummy cell structure for 1T1C FeRAM cell array | Physics | 1 | Expired |
| US6534808B2 | Metal-insulator-semiconductor photocell and imager | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.