Electron beam exposure method and apparatus
US4950910A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1989 |
| Grant date | Aug 21, 1990 |
| Priority date | — |
| Expiry date | Jan 31, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31767
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for depicting a pattern on a sample having a plurality of exposure areas placed on a movable stage by irradiating an electron beam. A pattern density is calculated from data of a pattern to be exposed for every exposure area on the sample. Next, the calculated pattern density is compared with a predetermined pattern density. Then when the calculated pattern density in a first exposure area contained in said exposure pattern area is less than the predetermined pattern density, the pattern is depicted therein by a continuous stage moving process. On the other hand, when the calculated pattern density in a second exposure area contained in the exposure areas is equal or greater than the predetermined pattern density, the pattern is depicted therein by a step and repeat process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.