Method for repairing a pattern
US4952421A · kind A · utility
9Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1988 |
| Grant date | Aug 28, 1990 |
| Priority date | — |
| Expiry date | Nov 8, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76892
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method for repairing the pattern is to repair the lacking portion of the pattern included in the X-ray exposure mask with the WF.sub.6 gas being filled in the vicinity thereof, wherein the focused ion beam irradiates the defect portion, whereby the WF.sub.6 gas is decomposed to form a tungsten thin film so as to at least fill the lacking portion. On this occasion, the focused ion beam is successively applied so that it is always in contact with the edge of the tungsten thin film constituting the pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.