Method for the fabrication of an alternation of layers of monocrystalline semiconducting material and layers of insulating material
US4952526A · kind A · utility
64Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 1989 |
| Grant date | Aug 28, 1990 |
| Priority date | — |
| Expiry date | Apr 4, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a layer of monocrystalline, semiconducting material on a layer of insulating material is disclosed. For this, epitaxial growth is achieved in a cavity closed by layers of dielectric materials, using seeds of monocrystalline, semiconducting material of a substrate. This method thus enables a 3D integration of semiconductor components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.