Static induction and punching-through photosensitive transistor devices
US4952996A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jan 25, 1989 |
| Grant date | Aug 28, 1990 |
| Priority date | — |
| Expiry date | Jan 25, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/196
Abstract
A semiconductor device comprises a semiconductor substrate of a low impurity concentration, a channel region formed on the substrate and having a low impurity concentration, a source region formed on the channel region and having a high impurity concentration of a conductive type opposite to that of the substrate, and a drain region formed on the channel region and having a high impurity concentration of a conductive type opposite to that of the substrate. The source region and the drain region are arranged along a predetermined direction along the substrate. The semiconductor device further includes an accumulating gate region of a conductive type same as that of the substrate, so formed as to surround either one of the source region and drain region, leaving a part of said channel region sandwiched between the source region and the drain region. A current flows from either to the other of the source region and the drain region through the part of the channel region sandwiched between the source region and the region. A charge is accumulated in the accumulating gate region according to the intensity of radiation incident on the device. The potential of the accumulating gate region…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.