Nonvolatile semiconductor memory device capable of reliably writing data and a data writing method therefor
US4953129A · kind A · utility
70Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1989 |
| Grant date | Aug 28, 1990 |
| Priority date | — |
| Expiry date | Apr 13, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically erasable programmable read only memory (EEPROM) latches externally applied write data in column latches, erases information of selected memory cells and then writes the latched write data into the selected memory cells. This EEPROM includes detectors for detecting a potential of the latch node of the corresponding latch, chargers each for charging the corresponding bit line in response to the output of the potential detector in a latched data write cycle, and separation transistors each for separating a bit line from the latch node of the corresponding column latch in response to the activation of the chargers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.