Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor

US4954142A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jeffrey Carr · معلمی نژاد, US
• Lawrence D. David · Durham, US
• William L. Guthrie · Saratoga, US
• Frank B. Kaufman · Ossining, US
• William J. Patrick · Newburgh, US
• Kenneth P. Rodbell · Sandy Hook, US
• Robert W. Pasco · Wappingers Falls, US
• Anton Nenadic · Red Hook, US

Key dates

• Filing date: Mar 7, 1989
• Grant date: Sep 4, 1990
• Expiry date: Mar 7, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/4864
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; PA0 obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and PA0 contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. PA0 The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.