Method for examining a specimen in a particle beam instrument
US4954705A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1989 |
| Grant date | Sep 4, 1990 |
| Priority date | — |
| Expiry date | Oct 2, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24592
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
For localization of the defects on mask and wafers generated by particle occupation, electron-optical imaging methods have been developed where the subject to be examined is scanned with a focused electron beam. Since the signal-to-noise ratio needed for a reliable defect recognition limits the scan rate, the throughput of inspected subjects remains low. It is therefore proposed that the subject be scanned with a line-shaped electron probe and that the triggered secondary electons be imaged onto a detector with the assistance of an electron optics comprising an immersion lens, whereby one line element of the surface region illuminated by the electron probe is assigned to each detector element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.