Thin film transistor formed on insulating substrate
US4954855A · kind A · utility
44Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1987 |
| Grant date | Sep 4, 1990 |
| Priority date | — |
| Expiry date | Oct 28, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A thin film transistor formed on an insulating sulstrate is disclosed in which metal silicide layers are formed in a thin film made of a monocrystalline, polycrystalline, or amorphous semiconductor material, to be used as source and drain regions, and further a gate electrode includes a metal silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.