MOS-controlled thyristor (MCT)

US4954869A · kind A · utility

Assignee

• Asea Brown Boveri, S.A. · CH

Inventor

• Friedhelm Bauer · Suhr, CH

Key dates

• Filing date: Mar 2, 1989
• Grant date: Sep 4, 1990
• Expiry date: Mar 2, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/655

Abstract

In an n-channel MCT (MOS-controlled thyristor), the p-doped channel region and the n.sup.+ -doped drain region are replaced by an n-doped combined channel-drain region (13) in the MOSFET structure of the switchable cathode short-circuits. The resulting MOSFET structure of the depletion type results in latch-up immunity for the component and makes possible a simple optimization of the current level which can be switched off as a maximum.