Dry etching apparatus
US4956043A · kind A · utility
36Cited by
9References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 1988 |
| Grant date | Sep 11, 1990 |
| Priority date | — |
| Expiry date | May 10, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching apparatus is disclosed, in which the temperature of an article to be etched, placed on a wafer table, is controlled by a liquefied gas and a heater and the height of the surface of the liquefied gas can be varied arbitrarily. This apparatus enables the controlling of the temperature of the article to be done with a high accuracy over a wide range of low levels. Therefore, a low-temperature dry etching operation, which cannot otherwise be attained by a conventional apparatus of this kind, can be carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.