Differential etching of silicon nitride
US4956314A · kind A · utility
41Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 1989 |
| Grant date | Sep 11, 1990 |
| Priority date | — |
| Expiry date | May 30, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for differentially etching silicon nitride, preferably formed in a hydrogen free environment, wherein hydrogen is implanted into various regions of the silicon nitride. The silicon nitride may then be etched by a number of different etchants, some of which will etch the implanted regions appreciably faster and others which will etch the non-implanted regions more quickly. This method is especially useful in the fabrication of self-aligned gate devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.