Semiconductor device
US4956693A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1987 |
| Grant date | Sep 11, 1990 |
| Priority date | — |
| Expiry date | Mar 19, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device having a support region, an element-forming region (e.g., an epitaxial layer) and a buried layer between the support region and the element-forming region, with at least one of a MOS element and a bipolar element being formed in the element-forming region. The feature of the present invention resides in that atoms of at least one element selected from oxygen, nitrogen, carbon, argon, neon, krypton and helium is contained in a layer in at least one of the element-forming region and the buried layer, so as to suppress auto-doping of impurities from the buried layer into the element-forming region and suppress swelling of the buried layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.