Circuit configuration and a method of testing storage cells
US4956819A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1988 |
| Grant date | Sep 11, 1990 |
| Priority date | — |
| Expiry date | Mar 16, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0963
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit configuration and method for testing storage cells of an integrated semiconductor memory precharges a pair of external bit lines to mutually complementary logic levels. All of the storage cells of a word line are always read-out in parallel. In a "no fault" situation the pair of external bit lines retains its precharge level, whereas in the case of a fault, the level of the external bit line which is precharged to logical 1 falls. This is recognized by a discriminator circuit and analyzed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.