Method for producing semiconductor device including a refractory metal pattern
US4957880A · kind A · utility
5Cited by
12References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1989 |
| Grant date | Sep 18, 1990 |
| Priority date | — |
| Expiry date | Apr 28, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/09
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the production method of a semiconductor device, a connection layer is formed on an insulating layer according to two steps of irradiating, in the atmosphere of a reaction gas, a region in which the connection layer is to be formed selectively by light having a wavelength in a range of from 200 to 1000 nm, and depositing selectively a connection layer forming substrate by a CVD method in the light irradiated region until a desired thickness of the substance is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.