High voltage integrated circuits
US4958210A · kind A · utility
1Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1989 |
| Grant date | Sep 18, 1990 |
| Priority date | — |
| Expiry date | Nov 20, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Premature avalanche breakdown resulting from high electric fields produced by metal interconnections crossing underlying high conductivity regions of an integrated circuit is eliminated by selectively providing discontinuities in the high conductivity regions underlying the metal interconnection paths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.