MESFET device having a semiconductor surface barrier layer
US4960718A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 5, 1988 |
| Grant date | Oct 2, 1990 |
| Priority date | — |
| Expiry date | Jul 5, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An InP MESFET having a semiconductor surface barrier layer formed of GaInP or AlInP. The semiconductor surface barrier layer is formed between an active layer and a gate electrode and the barrier height of the gate for the semiconductor surface barrier layer is higher than the barrier height of the gate for InP. In a method of forming an InP MESFET according to the present invention, the semiconductor surface barrier layer is formed by high dose implantation of Ga or Al into the active region. Surface barrier layers formed of other compounds, for example GaInAsP or AlInAsP, which have a lattice match with InP can be formed by other methods such as epitaxial growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.