Semiconductor laser device
US4961197A · kind A · utility
56Cited by
2References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1989 |
| Grant date | Oct 2, 1990 |
| Priority date | — |
| Expiry date | Apr 14, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high-power low-noise semiconductor laser device required for light sources for an erasable optical disc is a self-sustained pulsating semiconductor laser device in which an MQW structure is used for an active layer, and thus a kink output power and a light output power by which the self-pulsation is enabled are increased to 10 mW or more and noise is reduced. Another semiconductor laser device of a self-pulsation type has impurities that are doped in the active layer to reduce the self-pulsating frequency to obtain a low-noise characteristic even if higher optical feedback occurs. 259
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