Semiconductor device
US4961198A · kind A · utility
25Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 1989 |
| Grant date | Oct 2, 1990 |
| Priority date | — |
| Expiry date | Jan 12, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/06
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a semiconductor substrate having a plurality of mesa stripes whose widths are different from each other. Quantum well layers are formed on the mesa stripes respectively and have different band gap energies. The quantum well layers include ultra-thin epitaxial layers respectively. Semiconductor elements are formed on the mesa stripes respectively and include the quantum well layers respectively. Thicknesses of the ultra-thin layers are preferably equal to or less than 500 angstroms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.