Masato Ishino
22Patents
9h-index
16Co-inventors
72Inventor score
Filing activity: Jan 12, 1989 → Sep 1, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5319657A | Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof | Electricity | 27 | Expired |
| US4961198A | Semiconductor device | Electricity | 25 | Expired |
| US6104738A | Semiconductor laser and process for producing the same | Electricity | 21 | Expired |
| US5568501A | Semiconductor laser and method for producing the same | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6110756A | Method for producing semiconductor laser | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5793788A | Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same | Electricity | 19 | Expired |
| US5227015A | Method of fabricating semiconductor laser | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6256331A | Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor | Electricity | 15 | Expired |
| US6151351A | Distributed feedback semiconductor laser and method for producing the same | Electricity | 13 | Expired |
| US5539766A | Distributed feedback semiconductor laser | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6650672B2 | Semiconductor laser element having excellent light confinement effect and method for producing the semiconductor laser element | Electricity | 6 | Expired |
| US6107112A | Distributed feedback semiconductor laser and method for producing the same | Electricity | 5 | Expired |
| US5621747A | Multi quantum well semiconductor laser and optical communication system using the same | Electricity | 5 | Expired |
| US5960257A | Method distributed feedback semiconductor laser for fabricating | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5856207A | Method for producing a semiconductor laser | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5652762A | Semiconductor laser device and method for fabricating the same and strained quantum well crystal and method for fabricating the same | Electricity | 3 | Expired |
| US6625189B1 | Semiconductor laser device and fabrication method thereof | Electricity | 3 | Expired |
| US6697392B2 | Single wavelength laser module | Electricity | 2 | Expired |
| US5764682A | Distributed feedback semiconductor laser and method for fabricating the same | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6636541B1 | Semiconductor laser device | Electricity | 1 | Expired |
| US6933159B2 | Fabrication method of a semiconductor laser device | Electricity | 0 | Expired |
| US9529187B2 | Reflective display device | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.