Ashing method for removing an organic film on a substance of a semiconductor device under fabrication
US4961820A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1989 |
| Grant date | Oct 9, 1990 |
| Priority date | — |
| Expiry date | Jun 5, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Plasma ashing methods, for moving a resist material formed on a ground layer of a semiconductor device during fabrication of said semiconductor, are performed by using one of three kinds of reactant gases each composed of three different gases. Plasma ashing is performed: at an ashing rate of 0.5 .mu.m/min at 160.degree. C. and with an activation energy of 0.4 eV when a reactant gas composed of oxygen, water vapor and nitrogen is used; at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.38 eV and without etching the ground layer when a reactant gas composed of oxygen, water vapor and tetrafluoromethane is used; and at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.4 eV when a reactant gas composed of oxygen, hydrogen and nitrogen is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.