Process for forming electrodes for semiconductor devices using focused ion beam deposition
US4962059A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1989 |
| Grant date | Oct 9, 1990 |
| Priority date | — |
| Expiry date | Apr 14, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.