Method for producing hybrid integrated circuit substrate
US4963389A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 1989 |
| Grant date | Oct 16, 1990 |
| Priority date | — |
| Expiry date | Jan 6, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/16
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a high density hybrid integrated circuit substrate capable of forming a very fine pattern of a conductor by means of the chemical plating and at the same time capable of applying the chemical plating, while protecting the resistor formed on the substrate in advance of the chemical plating step, the production method comprising steps of: forming a resistor on an electrically insulating substrate; forming an activating layer for depositing a chemical plating on the electrically insulating substrate in contact with the resistor; forming a stable resin layer, during the chemical plating step, by the photolithography process in a manner to cover the resistor, except for the portion of the activating layer where an electrically conductive layer is to be formed; and forming the electrically conductive layer by the chemical plating on the exposed portion of the activating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.