Method for manufacturing highly heat-resistant dielectrics
US4965134A · kind A · utility
17Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 1988 |
| Grant date | Oct 23, 1990 |
| Priority date | — |
| Expiry date | May 9, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31725
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing highly heat resistant dielectrics is provided wherein an oligomeric and/or polymeric hydroxypolyamide is dissolved in an organic solvent and then applied to a substrate. The solvent is removed and the hydroxypolyamide is converted into a polybenzoxazole by annealing at a temperature of between 200.degree. to 500.degree. C. The resulting dielectrics are stable up to 550.degree. C. and have a continuous temperature resistance of more than 3 hours at 470.degree. C. The dielectrics are particularly well suited for applications in microelectronics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.