Method of fabricating a bi-CMOS device
US4965216A · kind A · utility
13Cited by
5References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1990 |
| Grant date | Oct 23, 1990 |
| Priority date | — |
| Expiry date | Jan 26, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/124
Abstract
A process for fabricating a CMOS compatible bipolar transistor is described. The transistor, which is of the polysilicon emitter type, is fabricated by forming a p-type layer in a well, providing a polysilicon emitter in contact with the layer, using the emitter as a mask to implant p.sup.+ -type base contact regions, and applying contacts to the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.