Method of stabilizing amorphous semiconductors
US4965225A · kind A · utility
12Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Sep 28, 1989 |
| Grant date | Oct 23, 1990 |
| Priority date | — |
| Expiry date | Sep 28, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/29
Abstract
An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.