Heterojunction field effect transistor

US4967242A · kind A · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Takuji Sonoda · Itami, JP
• Kazuo Hayashi · Kyoto, JP

Key dates

• Filing date: Jan 19, 1989
• Grant date: Oct 30, 1990
• Expiry date: Jan 19, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4755

Abstract

A heterojunction field effect transistor includes a carrier supplying layer comprising material which is not likely to produce a deep level even by doping. A channel layer comprises material which has the largest electron affinity among three types of semiconductor material constituting the heterojunction FET and has a high carrier mobility. A spacer layer is interposed between the channel layer and the carrier supplying layer and comprises material which enables the reduction of Coulomb interaction between two-dimensional carriers in the channel layer and ions in the carrier supplying layer. In addition, the spacer layer increases the effective conduction band energy discontinuity .DELTA.E.sub.c between the carrier supplying layer and the channel layer.