Takuji Sonoda
16Patents
10h-index
12Co-inventors
61Inventor score
Filing activity: Jan 19, 1989 → Feb 26, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5032541A | Method of producing a semiconductor device including a Schottky gate | Electricity | 40 | Expired |
| US5285087A | Heterojunction field effect transistor | Electricity | 27 | Expired |
| US5288654A | Method of making a mushroom-shaped gate electrode of semiconductor device | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5711813A | Epitaxial crystal growth apparatus | Chemistry; Metallurgy | 17 | Expired |
| US5362677A | Method for producing a field effect transistor with a gate recess structure | Electricity | 17 | Expired |
| US5139968A | Method of producing a t-shaped gate electrode | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5250822A | Field effect transistor | Electricity | 15 | Expired |
| US4984036A | Field effect transistor with multiple grooves | Electricity | 13 | Expired |
| US5760457A | Bipolar transistor circuit element having base ballasting resistor | Electricity | 10 | Expired |
| US5428224A | Field effect transistor | Performing Operations; Transporting | 10 | Expired |
| US5679603A | Method of making semiconductor device including high resistivity layer | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5185534A | Monolithic parallel connected transistor structure | Electricity | 9 | Expired |
| US4967242A | Heterojunction field effect transistor | Electricity | 9 | Expired |
| US5365078A | Semiconductor device and method of making it | Electricity | 6 | Expired |
| US5220186A | Semiconductor device with a mushroom-shaped gate electrode | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5045497A | Method of making a schottky electrode | Emerging Cross-Sectional Technologies | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.