Trench power MOSFET device
US4967245A · kind A · utility
139Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1988 |
| Grant date | Oct 30, 1990 |
| Priority date | — |
| Expiry date | Mar 14, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench power MOSFET device is disclosed wherein the method of manufacturing produces a high density MOSFET cell with good breakdown characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.