SILICONIX INCORPORATED
257Patents
5Active
257Granted
43Portfolio score
Filing activity: Nov 13, 1975 → Mar 8, 2019 · 2 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5156989A | Complementary, isolated DMOS IC technology | Emerging Cross-Sectional Technologies | 319 | Expired |
| US6049108A | Trench-gated MOSFET with bidirectional voltage clamping | Electricity | 313 | Expired |
| US5072266A | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry | Emerging Cross-Sectional Technologies | 286 | Expired |
| US4893160A | Method for increasing the performance of trenched devices and the resulting structure | Electricity | 264 | Expired |
| US5665996A | Vertical power mosfet having thick metal layer to reduce distributed resistance | Electricity | 256 | Expired |
| US4914058A | Grooved DMOS process with varying gate dielectric thickness | Emerging Cross-Sectional Technologies | 207 | Expired |
| US6239463A | Low resistance power MOSFET or other device containing silicon-germanium layer | Electricity | 204 | Expired |
| US6046470A | Trench-gated MOSFET with integral temperature detection diode | Electricity | 192 | Expired |
| US5757081A | Surface mount and flip chip technology for total integrated circuit isolation | Emerging Cross-Sectional Technologies | 185 | Expired |
| US5814858A | Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer | Electricity | 183 | Expired |
| US5929481A | High density trench DMOS transistor with trench bottom implant | Electricity | 175 | Expired |
| US5168331A | Power metal-oxide-semiconductor field effect transistor | Electricity | 170 | Expired |
| US5689128A | High density trenched DMOS transistor | Electricity | 170 | Expired |
| US6078090A | Trench-gated Schottky diode with integral clamping diode | Electricity | 163 | Expired |
| US4767722A | Method for making planar vertical channel DMOS structures | Electricity | 161 | Expired |
| US6084264A | Trench MOSFET having improved breakdown and on-resistance characteristics | Electricity | 152 | Expired |
| US5430324A | High voltage transistor having edge termination utilizing trench technology | Electricity | 144 | Expired |
| US5597765A | Method for making termination structure for power MOSFET | Electricity | 144 | Expired |
| US5689144A | Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance | Electricity | 143 | Expired |
| US5386136A | Lightly-doped drain MOSFET with improved breakdown characteristics | Emerging Cross-Sectional Technologies | 143 | Expired |
| US4967245A | Trench power MOSFET device | Electricity | 139 | Expired |
| US5485027A | Isolated DMOS IC technology | Emerging Cross-Sectional Technologies | 137 | Expired |
| US5753529A | Surface mount and flip chip technology for total integrated circuit isolation | Emerging Cross-Sectional Technologies | 137 | Expired |
| US5605852A | Method for fabricating high voltage transistor having trenched termination | Electricity | 129 | Expired |
| US5034785A | Planar vertical channel DMOS structure | Electricity | 128 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.