Semiconductor device

US4967254A · kind A · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventor

• Teruyuki Shimura · Tokyo, JP

Key dates

• Filing date: Jul 11, 1988
• Grant date: Oct 30, 1990
• Expiry date: Jul 11, 2008

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/111

Abstract

A semiconductor device includes a collector layer comprising a first conductivity type semiconductor layer, a base layer comprising a second conductivity type semiconductor layer produced on the collector layer, an emitter layer comprising a first conductivity type semiconductor layer produced on the base layer, a contact layer comprising an undoped semiconductor layer produced on the emitter layer, second conductivity type first implantation regions produced at regions each consisting of the contact layer, the emitter layer, and the base layer, so as to leave a central region therebetween, base electrodes produced on the first implantation regions, a first conductivity type second implantation region produced by implanting impurities from the surface of the contact layer extending into the emitter layer, in a region between the first implantation regions, and an emitter electrode produced on the second implantation region. Or, a semiconductor device includes an emitter layer comprising undoped semiconductor layer and a first conductivity type second implantation region produced by implanting impurities from the surface of the undoped semiconductor layer extending into the base lay…