Teruyuki Shimura
29Patents
10h-index
30Co-inventors
75Inventor score
Filing activity: Jul 11, 1988 → Nov 30, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7145397B2 | Output overvoltage protection circuit for power amplifier | Electricity | 61 | Expired |
| US5864169A | Semiconductor device including plated heat sink and airbridge for heat dissipation | Electricity | 40 | Expired |
| US6683512B2 | High frequency module having a laminate board with a plurality of dielectric layers | Emerging Cross-Sectional Technologies | 30 | Expired |
| US5073812A | Heterojunction bipolar transistor | Electricity | 21 | Expired |
| US4977100A | Method of fabricating a MESFET | Electricity | 20 | Expired |
| US5889434A | Microwave power amplifier | Electricity | 16 | Expired |
| US5414273A | Heterojunction bipolar transistor | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5357121A | Optoelectronic integrated circuit | Electricity | 12 | Expired |
| US5760457A | Bipolar transistor circuit element having base ballasting resistor | Electricity | 10 | Expired |
| US5231040A | Method of making a field effect transistor | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5793067A | Hybrid transistor structure with widened leads for reduced thermal resistance | Electricity | 8 | Expired |
| US5719530A | High power bipolar transistor device | Electricity | 7 | Expired |
| US4967254A | Semiconductor device | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5237192A | MESFET semiconductor device having a T-shaped gate electrode | Electricity | 6 | Expired |
| US5192700A | Method of making field effect transistor | Electricity | 6 | Expired |
| US6081003A | Heterojunction bipolar transistor with ballast resistor | Electricity | 5 | Expired |
| US5101245A | Field effect transistor and method for making same | Electricity | 5 | Expired |
| US5063167A | Method of producing a bipolar transistor with spacers | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5212103A | Method of making a heterojunction bipolar transistor | Electricity | 5 | Expired |
| US5726468A | Compound semiconductor bipolar transistor | Electricity | 4 | Expired |
| US5163169A | Frequency divider having the power supply connected to the GaAs substrate | Electricity | 4 | Expired |
| US5698871A | Heterojunction bipolar transistor | Electricity | 4 | Expired |
| US5369044A | Method for producing a semiconductor device | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6861906B2 | High-frequency semiconductor device | Electricity | 3 | Expired |
| US5973543A | Bias circuit for bipolar transistor | Physics | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.