Controllable power semiconductor component

US4967255A · kind A · utility

Assignee

• Asea Brown Boveri, S.A. · CH

Inventors

• Friedhelm Bauer · Suhr, CH
• Horst Gruning · Wettingen, CH

Key dates

• Filing date: Aug 21, 1989
• Grant date: Oct 30, 1990
• Expiry date: Aug 21, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/199

Abstract

In a controllable power semiconductor component having a pnpn layer sequence of p-type emitter layer (9), n-type base layer (8), p-type base layer (7) and n-type emitter layer (5) the critical increased field rise during turn-off is reduced as a result of an intermediate layer (11), which has a higher n-doping than the n-type base layer (8) and which is inserted between the n-type base layer (8) and the p-type base layer (7).