Method of haze-free polishing for semiconductor wafers

US4968381A · kind A · utility

Assignee

• Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

• Helene Prigge · Unterschleißheim, DE
• Anton Schnegg · Burghausen, DE
• Gerhard Brehm · Emmerting, DE
• Herbert Jacob · Burghausen, DE

Key dates

• Filing date: Sep 28, 1988
• Grant date: Nov 6, 1990
• Expiry date: Sep 28, 2008

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/30625
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A polishing process in which haze-free semiconductor wafers can be obtained in a single-stage process in which an initial phase of the polishing operation is carried out in the usual manner in the alkaline region. This initial stage is followed by a final phase in which polishing is carried out, at a pH of 3 to 7, in the presence of additives in the polishing agent which reduce the amount of material removed by polishing. Consequently, it may be possible to dispense with polishing agent components which act mechanically. Both phases can be carried out on one and the same equipment without interrupting the polishing operation.