Monolithic microwave integrated circuit having vertically stacked components
US4969032A · kind A · utility
18Cited by
2References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 1988 |
| Grant date | Nov 6, 1990 |
| Priority date | — |
| Expiry date | Jul 18, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/856
Abstract
A monolithic microwave integrated circuit having multiple, vetically stacked components wherein at least three metal layers isolated from each other by layers of non-conducting material are formed on a semi-insulating substrate, generally comprised of gallium arsenide. Vertically stacked capacitors, inductors and various combinations thereof may be fabricated using the present invention. Further, the vetrically stacked components may be formed on active devices such as FETs and diodies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.