Patent · US Expired

PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides

US4969415A · kind A · utility

8Cited by

4References

5Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Johann W. Bartha · Aidlingen, DE
Thomas Bayer · Igersheim, DE
Johann Greschner · Neckartenzlingen, DE
Georg Kraus · Konz, DE
Gerhard Schmid · Mindelheim, DE

Key dates

Filing date	Dec 28, 1989
Grant date	Nov 13, 1990
Priority date	—
Expiry date	Dec 28, 2009

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/147
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The apparatus comprises a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into the chamber and a port through which the chamber is evacuated, refractory metal cathode configuration within the chamber, an anode within the chamber, and energy impression means for ionizing the etch gas in the chamber, whereby the etch gas reacts with the refractory metal cathode configuration to convert the metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on the anode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.