Microwave plasma chemical vapor deposition apparatus for mass-producing functional deposited films
US4972799A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 1990 |
| Grant date | Nov 27, 1990 |
| Priority date | — |
| Expiry date | Jan 25, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a microwave plasma chemical vapor deposition apparatus which comprises a substantially enclosed deposition chamber, a means for supporting a substrate on which a functional deposited film is to be formed, a means for supplying raw material gases, a means for evacuating the inside of said deposition chamber and a means for generating microwave discharge plasmas in said deposition chamber which includes a waveguide extending from a microwave power source and a microwave introducing window through which a microwave energy is to be introduced into said deposition chamber, the improvement characterized in that said apparatus is provided with a holding member capable of holding said microwave introducing window and said substrate and capable of sealing said deposition chamber in a air-tight state upon film-formation and said apparatus is provided with a means for transporting said holding member under vacuum condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.