Process for preserving the surface of silicon wafers
US4973563A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1989 |
| Grant date | Nov 27, 1990 |
| Priority date | — |
| Expiry date | Jun 20, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for preserving the surface of silicon wafers after the wafers are polished in a conventional polishing operation by converting the wafer surface to the hydrophobic state, in particular, by polishing, or with hydrofluoric acid and treating immediately afterwards with a reagent, e.g., alcohols, organosilanes or silanols and preferably in aqueous solution. The wafer becomes coated in this process with a protective layer which inhibits surface deterioration, and also permits long storage times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.