Semiconductive stalk structure
US4975759A · kind A · utility
2Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1989 |
| Grant date | Dec 4, 1990 |
| Priority date | — |
| Expiry date | Mar 6, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76294
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is selectively removed from the bottom of the moat to expose silicon. An epitaxial stalk (a recessed mesa) is grown on the silicon at the bottom of the moat to a height which makes its top at least coplanar with the top surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.